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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB26CNE8N G
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IPB26CNE8N G

Manufacturer Part Number IPB26CNE8N G
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 85V 35A D2PAK
Package PG-TO263-3
In Stock 4439 pcs
Data sheet IPx25,26CNE8N GPart Number Guide
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 39µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 26mOhm @ 35A, 10V
Power Dissipation (Max) 71W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Base Product Number IPB26C

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